Beyond the Boundaries of State-of-the-Art Power Semiconductor Devices

First topic of this paper is related to RF SiC MOSFETs designed and manufactured for high frequency and high-power applications. Discrete RF SiC transistors, Single Ended Modules, and Class D Full Bridge Modules are presented. The second “challenge” opens the path to increase the switching speed of voltage-controlled power semiconductors employing conductivity modulation. The simulation work presented in this paper is for vertical IGBTs of any type, made on Silicon, but the concept is applicable to any power devices. At the end, a new approach to convert a normally-ON SiC JFET into a normally-OFF power switch, totally compatible with the driving circuitry of the current SiC MOSFETs, is briefly analyzed.