Analysis of Drain Voltage Dependent RF Inductive Effect in Floating Body PD-SOI MOSFETs

Based on the analysis of the RF inductive effect due to the negative capacitance observed in the SSUB22/SUB -parameter of floating body PD-SOI n-MOSFETs on the Smith chart, the reason why this effect appears at a much higher V SUBDS/SUBthan the DC kink voltage VSUBkink/SUB , unlike in body contact devices, is revealed for the first time. The origin of the anomalous VSUBDS/SUB - dependence on RF inductive effect is identified by analyzing the VSUBDS/SUB - dependent kink conductance Gk and the pole frequency p f , which are extracted using the frequency curves of the output admittance. Using the measured GSUBk/SUB versus VSUBDS/SUB data, which is validated by a physical body transconductance mbg equation, it is confirmed that the turning radius of the SSUB22 /SUB -parameter is reduced at lower VSUBDS/SUB due to a decrease in gSUBmb/SUB . It is theoretically proven that the extracted fSUBp/SUB data is reduced as VSUBDS/SUB decreases, and if fSUBp/SUB is less than the minimum measurement frequency, the rotation angle of the SSUB22/SUB trajectory becomes significantly smaller. Due to the decrease in gSUBmb/SUB and fSUBp/SUB at lower , VSUBDS/SUB the anomalous RF inductive effect is exhibited in floating body devices.