650 V vertical Al0.51Ga0.49N power Schottky diodes
We report high-Al-composition (HAC) Al0.51Ga0.49N vertical power Schottky barrier diodes (SBDs) on sapphire substrates grown by metal organic chemical vapor deposition. The fabricated vertical HAC AlGaN-on-sapphire SBDs exhibit a low turn-on voltage of 1.31 V, a high on/off ratio of ∼107, a low ideality factor of 1.35, and a high breakdown voltage of 662 V.
Authors
- Hang Chen (ORCID: https://orcid.org/0000-0001-7358-6784)
- Chao Liu (ORCID: https://orcid.org/0000-0001-6368-3986)
- Tingting Mi
- Shuhui Zhang
- Xiaowen Wang (ORCID: https://orcid.org/0000-0002-3308-6627)
- Tianpeng Yang
Institutions
- Shandong University (CN)
- Beijing Institute of Optoelectronic Technology (CN)
- City University of Hong Kong, Shenzhen Research Institute (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-10-28
- DOI
- https://doi.org/10.1063/5.0233479
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Shandong Province
- National Key Research and Development Program of China
- Basic and Applied Basic Research Foundation of Guangdong Province