TEMPERATURE DETERMINATION OF THE AlInGaN LASER ACTIVE REGION BY IR MICROSCOPY & TRANSIENT THERMAL TESTS

In this study, the individual components of thermal resistance in a AlInGaN laser were experimentally analyzed. The thermal resistance was measured using two approaches: an indirect method, based on the measurement of transient temperature-sensitive characteristics (the voltage at the p-n junction) with the T3Ster device, and a direct method using an infrared thermal imaging microscope.

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Publication Details

Published
2024-10-21
DOI
https://doi.org/10.61527/appfe-2024.28-29
Primary Topic
Calibration and Measurement Techniques
Type
article
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article

TEMPERATURE DETERMINATION OF THE AlInGaN LASER ACTIVE REGION BY IR MICROSCOPY & TRANSIENT THERMAL TESTS

A. E. Chernyakov, А. Е. Иванов
Calibration and Measurement Techniques
article

TEMPERATURE DETERMINATION OF THE AlInGaN LASER ACTIVE REGION BY IR MICROSCOPY & TRANSIENT THERMAL TESTS

A. E. Chernyakov, А. Е. Иванов
article en

Abstract

In this study, the individual components of thermal resistance in a AlInGaN laser were experimentally analyzed. The thermal resistance was measured using two approaches: an indirect method, based on the measurement of transient temperature-sensitive characteristics (the voltage at the p-n junction) with the T3Ster device, and a direct method using an infrared thermal imaging microscope.

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TEMPERATURE DETERMINATION OF THE AlInGaN LASER ACTIVE REGION BY IR MICROSCOPY & TRANSIENT THERMAL TESTS — A. E. Chernyakov, А. Е. Иванов · (2024) | TGRS Research Map | TGRS