ADDITION OF COMPACT (ELECTRICAL) MODELS OF DEVICE STRUCTURES OF TRANSISTORS WITH HIGH ELECTRON MOBILITY AND HETEROJUNCTION BIPOLAR TRANSISTORS BASED ON A3B5 SEMICONDUCTORS, TAKING INTO ACCOUNT THE CHANGE (DEGRADATION) OF OPERATIONAL CHARACTERISTICS A

This work is dedicated to investigating the influence of electromagnetic interference (EMI) on the characteristics of integrated circuit (IC) elements, specifically on high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) based on GaAs. It is shown that the impact of EMI can be accounted for in circuit simulation by applying additional modules implemented in compact models of device structures. A model is proposed that describes the emergence of additional noise in devices under the influence of EMI.