ADDITION TO COMPACT MODELS OF GALLIUM ARSENIDE DEVICE STRUCTURES TAKING INTO ACCOUNT THE CHANGE (DEGRADATION) OF OPERATIONAL CHARACTERISTICS UNDER RADIATION EXPOSURE

This paper presents the results of an evaluation of the degradation processes of electrical characteristics of GaAs-based field-effect transistor device structures under the influence of a proton flux using computer simulation. The principles of forming an addition to compact (electrical) models of semiconductor devices are shown, allowing for the prediction of changes in their operational characteristics under radiation exposure.