DESIGN OPTIMIZATION FOR QUANTUM WELL INFRARED PHOTODETECTOR BASED ON GALLIUM NITRIDE

The spectrum of the absorption coefficient of an infrared photodetector using intrasubband transitions in quantum wells based on gallium nitride was calculated for different values of the composition of the barrier layers and the concentration of donor impurity in the quantum wells. It was shown that an increase in the mole fraction of aluminum in the material of the barrier layers and the electron concentration in quantum wells leads to a shift of the absorption peak towards the visible range.