LANGMUIR-BLODGETT THIN STRUCTURES FOR MODERN ELECTRONICS

The results of obtaining Langmuir-Blodgett film structures based on a redox polymer with a thickness of about several tens of nm are presented. It is shown that the conductivity values are consistent with the number of layers included in the film structure, and the effect of oxidative transitions of the polymer is also shown. In this way, the conductivity in the components of the finished electronics element can be adjusted.

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Publication Details

Published
2024-10-21
DOI
https://doi.org/10.61527/appfe-2024.259-260
Primary Topic
Structural Analysis and Optimization
Type
article
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article

LANGMUIR-BLODGETT THIN STRUCTURES FOR MODERN ELECTRONICS

E. G. Glukhovskoy, V N Mironyuk, Tatiana Ya. Karatyshova, D.V. Tkachev
Structural Analysis and Optimization
article

LANGMUIR-BLODGETT THIN STRUCTURES FOR MODERN ELECTRONICS

E. G. Glukhovskoy, V N Mironyuk, Tatiana Ya. Karatyshova, D.V. Tkachev
article en

Abstract

The results of obtaining Langmuir-Blodgett film structures based on a redox polymer with a thickness of about several tens of nm are presented. It is shown that the conductivity values are consistent with the number of layers included in the film structure, and the effect of oxidative transitions of the polymer is also shown. In this way, the conductivity in the components of the finished electronics element can be adjusted.

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LANGMUIR-BLODGETT THIN STRUCTURES FOR MODERN ELECTRONICS — E. G. Glukhovskoy, V N Mironyuk, et al. · (2024) | TGRS Research Map | TGRS