INVESTIGATION OF SEMICONDUCTOR HETEROSTRUCTURES WITH NANOSCALE LAYERS USING DYNAMIC SECONDARY ION MASS SPECTROMETRY

The results of characterization of the quantum cascade heterostructure laser based on AlInAs/GaInAs system emitting at a wavelength of 5 microns are presented. The use of dynamic secondary ion mass spectrometry for analyzing modern semiconductor heterostructures has been shown to be effective in determining the concentrations of both basic and impurity elements in nanoscale layers.

Authors

B. Ya. Ber (ORCID: https://orcid.org/0000-0003-2934-4176)
V. V. Mamutin
D. Yu. Kazantsev (ORCID: https://orcid.org/0000-0003-2173-1278)
M. V. Tokarev (ORCID: https://orcid.org/0009-0004-3309-1735)

Publication Details

Published: 2024-10-21
DOI: https://doi.org/10.61527/appfe-2024.282-284
Primary Topic: Ion-surface interactions and analysis
Type: article
Field-Weighted Citation Impact: 0.00

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article

INVESTIGATION OF SEMICONDUCTOR HETEROSTRUCTURES WITH NANOSCALE LAYERS USING DYNAMIC SECONDARY ION MASS SPECTROMETRY

B. Ya. Ber, V. V. Mamutin, D. Yu. Kazantsev, M. V. Tokarev

Oct 21, 2024

Ion-surface interactions and analysis

article

INVESTIGATION OF SEMICONDUCTOR HETEROSTRUCTURES WITH NANOSCALE LAYERS USING DYNAMIC SECONDARY ION MASS SPECTROMETRY

B. Ya. Ber, V. V. Mamutin, D. Yu. Kazantsev, M. V. Tokarev

October 21, 2024article en

Abstract

The results of characterization of the quantum cascade heterostructure laser based on AlInAs/GaInAs system emitting at a wavelength of 5 microns are presented. The use of dynamic secondary ion mass spectrometry for analyzing modern semiconductor heterostructures has been shown to be effective in determining the concentrations of both basic and impurity elements in nanoscale layers.

Openalex Percentile: Top 79%

Ion-surface interactions and analysis

DOI Open Access PDF OpenAlex

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INVESTIGATION OF SEMICONDUCTOR HETEROSTRUCTURES WITH NANOSCALE LAYERS USING DYNAMIC SECONDARY ION MASS SPECTROMETRY — B. Ya. Ber, V. V. Mamutin, et al. · (2024) | TGRS Research Map | TGRS