THE TIME OF THE PHOTOINDUCED SEMICONDUCTOR-METAL PHASE TRANSITION IN A VANADIUM DIOXIDE FILM

The dependence of the time of the photoinduced semiconductor-metal phase transition on the thickness of the vanadium dioxide film and the distance to the film surface is obtained.

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Publication Details

Published
2024-10-21
DOI
https://doi.org/10.61527/appfe-2024.287-288
Primary Topic
Transition Metal Oxide Nanomaterials
Type
article
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article

THE TIME OF THE PHOTOINDUCED SEMICONDUCTOR-METAL PHASE TRANSITION IN A VANADIUM DIOXIDE FILM

A. L. Semenov, E.M. Kulishkin
Transition Metal Oxide Nanomaterials
article

THE TIME OF THE PHOTOINDUCED SEMICONDUCTOR-METAL PHASE TRANSITION IN A VANADIUM DIOXIDE FILM

A. L. Semenov, E.M. Kulishkin
article en

Abstract

The dependence of the time of the photoinduced semiconductor-metal phase transition on the thickness of the vanadium dioxide film and the distance to the film surface is obtained.

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Transition Metal Oxide Nanomaterials
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THE TIME OF THE PHOTOINDUCED SEMICONDUCTOR-METAL PHASE TRANSITION IN A VANADIUM DIOXIDE FILM — A. L. Semenov, E.M. Kulishkin · (2024) | TGRS Research Map | TGRS