ELECTRICAL CHARACTERIZATION OF GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH HZO AND HfO2 FERROELECTRICS

A technique for modeling the input electrical characteristics of a silicon gate-allaround field-effect transistor with HfO2 and HZO ferroelectrics was presented. A dielectric hysteresis loop was calculated for this device.

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Publication Details

Published
2024-10-21
DOI
https://doi.org/10.61527/appfe-2024.240-242
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

ELECTRICAL CHARACTERIZATION OF GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH HZO AND HfO2 FERROELECTRICS

P. E. Novikov, I.Yu. Lovshenko, V. S. Volcheck, K.O. Volchhik
Radio Frequency Integrated Circuit Design
article

ELECTRICAL CHARACTERIZATION OF GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH HZO AND HfO2 FERROELECTRICS

P. E. Novikov, I.Yu. Lovshenko, V. S. Volcheck, K.O. Volchhik
article en

Abstract

A technique for modeling the input electrical characteristics of a silicon gate-allaround field-effect transistor with HfO2 and HZO ferroelectrics was presented. A dielectric hysteresis loop was calculated for this device.

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ELECTRICAL CHARACTERIZATION OF GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH HZO AND HfO2 FERROELECTRICS — P. E. Novikov, I.Yu. Lovshenko, et al. · (2024) | TGRS Research Map | TGRS