DELECTROPHYSICAL PROPERTIES OF MULTILAYER STRUCTURE Al-TiOX-CuOX-Al
The results of the study of memristors presented in the form of a multilayer AlTiOx-CuOx-Al structure with the property of bipolar resistive switching are shown. The samples were obtained by magnetron sputtering in an air atmosphere at a pressure of 5×10-3 mmHg. Electron microscopic analysis showed that the copper oxide layer has a columnar structure and a non-stoichiometric ratio of elements, due to which the memristive effect is enhanced.
Authors
- P. E. Troyan (ORCID: https://orcid.org/0000-0002-7349-0536)
- Yu. V. Sakharov (ORCID: https://orcid.org/0000-0002-7044-6900)
- А.E. Urazbekov
Publication Details
- Published
- 2024-10-21
- DOI
- https://doi.org/10.61527/appfe-2024.298-299
- Primary Topic
- Material Properties and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00