SIMULATION OF Si-SiO2 INTERFACE DEPASSIVATION IN LDMOS TRANSISTORS

Reliability of microwave LDMOS transistors is one of the key tasks in their design. Modeling of transistor structures using specialized CAD tools allows predicting the service life of devices under various test conditions, which helps to reduce the number of defective products. One of the main factors in the degradation of the electrophysical characteristics of transistors is the rupture of hydrogen bonds at the interfaces, which leads to an increase in interband traps. Modeling of broken bonds was carried out on a test structure of an LDMOS transistor developed using the technology of JSC NIIET, using the Sentaurus instrumental and technological CAD system.