Ultralow-pressure-driven polarization switching in ferroelectric membranes

Van der Waals integration of freestanding perovskite-oxide membranes with two-dimensional semiconductors has emerged as a promising strategy for developing high-performance electronics, such as field-effect transistors. In these innovative field-effect transistors, the oxide membranes have primarily functioned as dielectric layers, yet their great potential for structural tunability remains largely untapped. Free of epitaxial constraints by the substrate, these freestanding membranes exhibit remarkable structural tunability, providing a unique material system to achieve huge strain gradients and pronounced flexoelectric effects. Here, by harnessing the excellent structural tunability of PbTiO<sub>3</sub> membranes and modulating the underlying substrate's elasticity, we demonstrate the tip-pressure-induced polarization switching with an ultralow pressure (down to 0.06 GPa). Moreover, as an application demonstration, we develop a prototype non-volatile ferroelectric field-effect transistor integrated on silicon that can be operated mechanically and electrically. Our findings underscore the great potential of oxide membranes for utilization in advanced non-volatile electronics and highly sensitive pressure sensors.

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Publication Details

Journal
Nature Communications
Published
2024-10-28
DOI
https://doi.org/10.1038/s41467-024-53436-6
Citations
21
Primary Topic
Acoustic Wave Resonator Technologies
Type
article
Field-Weighted Citation Impact
3.87

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article

Ultralow-pressure-driven polarization switching in ferroelectric membranes

Jiawang Hong, Di Wu, Hongkai Ning, Yi-Chi Li et al.
21 citations
Nature Communications
Acoustic Wave Resonator Technologies
3.87
article

Ultralow-pressure-driven polarization switching in ferroelectric membranes

Jiawang Hong, Di Wu, Hongkai Ning, Yi-Chi Li, Yi Shi, Zhengbin Gu, Yingzhuo Lun, Xinrui Yang, Bo Hao, Shaoqing Xu, Yuefeng Nie, Jian Zhou, Xinran Wang, Lu Han, Taotao Li, Yueying Li, Shengjun Yan, Yuan Gao, Weisheng Li, Chenyi Gu
article en
21 citations

Abstract

Van der Waals integration of freestanding perovskite-oxide membranes with two-dimensional semiconductors has emerged as a promising strategy for developing high-performance electronics, such as field-effect transistors. In these innovative field-effect transistors, the oxide membranes have primarily functioned as dielectric layers, yet their great potential for structural tunability remains largely untapped. Free of epitaxial constraints by the substrate, these freestanding membranes exhibit remarkable structural tunability, providing a unique material system to achieve huge strain gradients and pronounced flexoelectric effects. Here, by harnessing the excellent structural tunability of PbTiO<sub>3</sub> membranes and modulating the underlying substrate's elasticity, we demonstrate the tip-pressure-induced polarization switching with an ultralow pressure (down to 0.06 GPa). Moreover, as an application demonstration, we develop a prototype non-volatile ferroelectric field-effect transistor integrated on silicon that can be operated mechanically and electrically. Our findings underscore the great potential of oxide membranes for utilization in advanced non-volatile electronics and highly sensitive pressure sensors.

Nature CommunicationsVol. 15(1)
Beijing Institute of Technology (CN), Suzhou Research Institute (CN), Collaborative Innovation Center of Advanced Microstructures (CN), Intelligent Health (United Kingdom) (GB), Southeast University (CN), Nanjing University (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, Government of Jiangsu Province, Natural Science Foundation of Jiangsu Province, Nanjing University, National Postdoctoral Program for Innovative Talents
Affordable and clean energy
Openalex Percentile: Top 6%
Acoustic Wave Resonator Technologies
3.87
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