Modeling and Analyzing of CMOS Cross-Coupled Differential-Drive Rectifier for Ultra-Low-Power Ambient RF Energy Harvesting

This paper models and analyzes the Complementary Metal Oxide Semiconductor (CMOS) cross-coupled differential-drive (CCDD) rectifier for Ultra-Low-Power ambient radio-frequency energy harvesters (RFEHs) working in the subthreshold region. In this paper, two closed-form equations of CCDD rectifier output voltage and input resistance in the subthreshold region were derived based on BSIM4 models of NMOS and PMOS. The model give insight to specify circuit parameters according to different inputs, transistor sizes, threshold voltages, numbers of stages, load conditions and compensation voltages, which can be used to optimize the rectifier circuit. There is a good agreement between the simulation results and these models, and these models have a maximum deviation of 10% in comparison with the simulation results in the subthreshold region. The measurement results of a single-stage CCDD rectifier reported in a previous paper were adopted to verify the model. The output voltage and input resistance predicted by these models provide excellent consistency with corresponding measurement results. The model can be employed to optimize the CCDD rectifier without expensive calculation in the design stage.