Current-induced spin polarization and spin Hall effect in III-V compounds two-dimensional materials

We construct a multiband $\mathbf{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbf{p}$ Hamiltonian in monolayer and bilayer double-layer honeycomb III-V compounds including spin-orbit coupling (SOC) based on the invariant theory. The Hamiltonian can describe electronic structures near the $\mathrm{\ensuremath{\Gamma}}$ point of the Brillouin zone and anisotropic spin splitting, which is in good agreement with first-principles calculations. These SOC effects contribute to the existence of current-induced spin polarization (CISP) and spin Hall effect (SHE). The interplay between Zeeman and Rashba SOC leads to Lifshitz transitions for CISP and SHE at the maximum of lower-valence bands. Our work offers a possible approach for constructing 2D III-V compounds spintronic devices.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2024-10-28
DOI
https://doi.org/10.1103/physrevb.110.165430
Citations
3
Primary Topic
ZnO doping and properties
Type
article
Field-Weighted Citation Impact
0.35

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article

Current-induced spin polarization and spin Hall effect in III-V compounds two-dimensional materials

Wenkai Lou, Yi Ren, Kai Chang, Dong Zhang et al.
3 citations
Physical review. B./Physical review. B
ZnO doping and properties
0.35
article

Current-induced spin polarization and spin Hall effect in III-V compounds two-dimensional materials

Wenkai Lou, Yi Ren, Kai Chang, Dong Zhang, Shuhan Sun
article en
3 citations

Abstract

We construct a multiband $\mathbf{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbf{p}$ Hamiltonian in monolayer and bilayer double-layer honeycomb III-V compounds including spin-orbit coupling (SOC) based on the invariant theory. The Hamiltonian can describe electronic structures near the $\mathrm{\ensuremath{\Gamma}}$ point of the Brillouin zone and anisotropic spin splitting, which is in good agreement with first-principles calculations. These SOC effects contribute to the existence of current-induced spin polarization (CISP) and spin Hall effect (SHE). The interplay between Zeeman and Rashba SOC leads to Lifshitz transitions for CISP and SHE at the maximum of lower-valence bands. Our work offers a possible approach for constructing 2D III-V compounds spintronic devices.

Physical review. B./Physical review. BVol. 110(16)
Hunan Normal University (CN), Chinese Academy of Sciences (CN), Institute of Semiconductors (CN), University of Chinese Academy of Sciences (CN), Zhejiang University (CN)
National Natural Science Foundation of China, Chinese Academy of Sciences
Openalex Percentile: Top 44%
ZnO doping and properties
0.35
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