Current-induced spin polarization and spin Hall effect in III-V compounds two-dimensional materials
We construct a multiband $\mathbf{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbf{p}$ Hamiltonian in monolayer and bilayer double-layer honeycomb III-V compounds including spin-orbit coupling (SOC) based on the invariant theory. The Hamiltonian can describe electronic structures near the $\mathrm{\ensuremath{\Gamma}}$ point of the Brillouin zone and anisotropic spin splitting, which is in good agreement with first-principles calculations. These SOC effects contribute to the existence of current-induced spin polarization (CISP) and spin Hall effect (SHE). The interplay between Zeeman and Rashba SOC leads to Lifshitz transitions for CISP and SHE at the maximum of lower-valence bands. Our work offers a possible approach for constructing 2D III-V compounds spintronic devices.
Authors
- Wenkai Lou (ORCID: https://orcid.org/0000-0001-6906-6479)
- Yi Ren (ORCID: https://orcid.org/0000-0002-3665-700X)
- Kai Chang (ORCID: https://orcid.org/0000-0002-4609-8061)
- Dong Zhang (ORCID: https://orcid.org/0000-0002-4227-665X)
- Shuhan Sun (ORCID: https://orcid.org/0000-0001-6641-6197)
Institutions
- Hunan Normal University (CN)
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
- Zhejiang University (CN)
Publication Details
- Journal
- Physical review. B./Physical review. B
- Published
- 2024-10-28
- DOI
- https://doi.org/10.1103/physrevb.110.165430
- Citations
- 3
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 0.35
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences