Proximity-Induced Exchange Interaction and Prolonged Valley Lifetime in MoSe<sub>2</sub>/CrSBr Van-Der-Waals Heterostructure with Orthogonal Spin Textures

Heterostructures, composed of semiconducting transition-metal dichalcogenides (TMDC) and magnetic van-der-Waals materials, offer exciting prospects for the manipulation of the TMDC valley properties via proximity interaction with the magnetic material. We show that the atomic proximity of monolayer MoSe<sub>2</sub> and the antiferromagnetic van-der-Waals crystal CrSBr leads to an unexpected breaking of time-reversal symmetry, with originally perpendicular spin directions in both materials. The observed effect can be traced back to a proximity-induced exchange interaction via first-principles calculations. The resulting spin splitting in MoSe<sub>2</sub> is determined experimentally and theoretically to be on the order of a few meV. Moreover, we find a more than 2 orders of magnitude longer valley lifetime of spin-polarized charge carriers in the heterostructure, as compared to monolayer MoSe<sub>2</sub>/SiO<sub>2</sub>, driven by a Mott transition in the type-III band-aligned heterostructure.

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Publication Details

Journal
ACS Nano
Published
2024-10-28
DOI
https://doi.org/10.1021/acsnano.4c07336
Citations
11
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.29

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article

Proximity-Induced Exchange Interaction and Prolonged Valley Lifetime in MoSe2/CrSBr Van-Der-Waals Heterostructure with Orthogonal Spin Textures

Samuel Mañas‐Valero, Andreas Beer, Jaroslav Fabian, Caique Serati de Brito et al.
11 citations
ACS Nano
2D Materials and Applications
1.29
article

Proximity-Induced Exchange Interaction and Prolonged Valley Lifetime in MoSe2/CrSBr Van-Der-Waals Heterostructure with Orthogonal Spin Textures

Samuel Mañas‐Valero, Andreas Beer, Jaroslav Fabian, Caique Serati de Brito, Herre S. J. van der Zant, Philipp Parzefall, Carla Boix‐Constant, Klaus Zollner, Josep Ingla‐Aynés, Christian Schüller, Talieh S. Ghiasi, Takashi Taniguchi, Kenji Watanabe, Paulo E. Faria, Y. Galvão Gobato
article en
11 citations

Abstract

Heterostructures, composed of semiconducting transition-metal dichalcogenides (TMDC) and magnetic van-der-Waals materials, offer exciting prospects for the manipulation of the TMDC valley properties via proximity interaction with the magnetic material. We show that the atomic proximity of monolayer MoSe<sub>2</sub> and the antiferromagnetic van-der-Waals crystal CrSBr leads to an unexpected breaking of time-reversal symmetry, with originally perpendicular spin directions in both materials. The observed effect can be traced back to a proximity-induced exchange interaction via first-principles calculations. The resulting spin splitting in MoSe<sub>2</sub> is determined experimentally and theoretically to be on the order of a few meV. Moreover, we find a more than 2 orders of magnitude longer valley lifetime of spin-polarized charge carriers in the heterostructure, as compared to monolayer MoSe<sub>2</sub>/SiO<sub>2</sub>, driven by a Mott transition in the type-III band-aligned heterostructure.

ACS NanoVol. 18(45)
Universidade Federal de São Carlos (BR), National Institute for Materials Science (JP), Parc Científic de la Universitat de València (ES), University of Regensburg (DE), Delft University of Technology (NL)
Graphene Flagship, European Commission, Deutscher Akademischer Austauschdienst, Deutsche Forschungsgemeinschaft, Ministry of Education, Culture, Sports, Science and Technology, Fundação de Amparo à Pesquisa do Estado de São Paulo, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Generalitat Valenciana, Conselho Nacional de Desenvolvimento Científico e Tecnológico, Japan Society for the Promotion of Science, H2020 Future and Emerging Technologies, H2020 Marie Skłodowska-Curie Actions
Climate action
Openalex Percentile: Top 16%
2D Materials and Applications
1.29
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