Transparent (Ni,Au)/ZnO:Al-Based Ohmic Contacts to p-Type GaN as an Insight into the Role of Ni and Au in Standard p-Type GaN Contacts

In this work, Ni/ZnO:Al and Au/ZnO:Al structures are proposed as efficient ohmic contacts to p-GaN. Through a careful selection of deposition parameters and annealing environment, we not only achieve the formation of high-quality ohmic contacts but also gain insights into the interfacial reactions, enhancing the understanding of conventional Ni/Au contact formation on p-GaN. In particular, the notion that the presence of NiO at the interface is enough for an ohmic contact to form is challenged by showing that in fact it has to be NiO formed at the interface from metallic Ni and additional oxygen. An Au-based ohmic contact is also presented, and its formation mechanism is explained, contrary to popular knowledge that Au does not form an ohmic contact with p-GaN. The obtained contacts are low resistivity, with contact resistances of 4.77 × 10^-3 Ω·cm² and 3.34 × 10^-3 Ω·cm² for Au-based and Ni-based ones, respectively. What is also important is that we show these oxide-based contacts with metallic interlayers give lower series resistances in simplified diode structures than a standard Ni/Au-based contact, making them promising for optoelectronic devices.