Boost Antiferroelectricity in ZrO₂-Based Capacitors by Ozone Treatment on Bottom Electrode
Boosted antiferroelectricity is achieved in antiferroelectric (AFE) ZrO2-based capacitors through the O3 treatment on bottom electrode (BE) in this study. The experimentally measured results indicate that the BE O3 treatment enhances the AFE polarization (>138%) without compromising the endurance of ZrO2 AFE capacitors. The dielectric constants measurements and the density functional theory (DFT) calculations were conducted to reveal the atomic-scale physical insight for the boosted antiferroelectricity. The proposed process optimization with O3 treatment and mechanism is helpful to promote the development of ZrO2-based AFE devices.
Authors
- Minglei Ma (ORCID: https://orcid.org/0000-0003-4906-2352)
- Jiacheng Xu (ORCID: https://orcid.org/0000-0003-4753-0634)
- Chengji Jin (ORCID: https://orcid.org/0000-0002-8517-459X)
- Jiameng Wang (ORCID: https://orcid.org/0000-0003-2649-4996)
- Huan Liu (ORCID: https://orcid.org/0000-0001-7329-0000)
- Genquan Han (ORCID: https://orcid.org/0000-0001-5140-4150)
- Jiani Gu (ORCID: https://orcid.org/0000-0002-5876-9897)
- Jiajia Chen (ORCID: https://orcid.org/0000-0002-7573-176X)
- Haoji Qian
- Gaobo Lin
- Miaomiao Zhang (ORCID: https://orcid.org/0009-0005-5089-377X)
- Yan Liu (ORCID: https://orcid.org/0000-0002-6747-8151)
- Rongzong Shen
Institutions
- Xidian University (CN)
- Zhejiang Lab (CN)
- Shanghai Institute of Microsystem and Information Technology (CN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-10-28
- DOI
- https://doi.org/10.1109/ted.2024.3480042
- Citations
- 5
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 1.04
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Zhejiang Province