Scalable Model, Parameter Extraction of GaN Schottky Barrier Diode (SBD) and Its Application in C-Band Limiter Design
In this article, a scalable model of thin-barrier lateral heterojunction AlGaN/GaN Schottky barrier diode (SBD) for RF simulation is proposed. By comparing the measured and modeled S-parameters under multibias bias conditions, it is verified that the scaling rule dependent on the effective junction area of the device can better predict the performance of large-size devices in the frequency range of 0.1–20 GHz. In addition, the C-band limiter is successfully designed by using the scalable SBD model. The physical and simulated S-parameters have good consistency, which further verifies the accuracy of the model.
Authors
- Ao Zhang (ORCID: https://orcid.org/0000-0002-1552-2763)
- Xuanwu Kang (ORCID: https://orcid.org/0000-0003-0607-2948)
- Zhenglin Zhang (ORCID: https://orcid.org/0000-0002-5490-6815)
- Rikang Zhao (ORCID: https://orcid.org/0000-0001-7170-9744)
- Yuyan Huang (ORCID: https://orcid.org/0009-0004-6429-7189)
- Jianjun Gao (ORCID: https://orcid.org/0000-0002-9178-4773)
- Ke Wei (ORCID: https://orcid.org/0000-0002-7616-3493)
- Yingkui Zheng
- Xinyu Liu (ORCID: https://orcid.org/0000-0003-0854-8559)
- Hao Wu (ORCID: https://orcid.org/0000-0003-3018-9054)
- Guoxiang Zhang (ORCID: https://orcid.org/0000-0002-4531-2628)
Institutions
- Chinese Academy of Sciences (CN)
- Nantong University (CN)
- Institute of Microelectronics (CN)
- East China Normal University (CN)
- Shandong University of Science and Technology (CN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-10-28
- DOI
- https://doi.org/10.1109/ted.2024.3479155
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62
Funders
- Youth Innovation Promotion Association of the Chinese Academy of Sciences