Broadband Light Harvesting from Scalable Two-Dimensional Semiconductor Multi-Heterostructures

Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry-Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experimental realization of an unpatterned/planar semiconductor thin-film absorber based on monolayer transition-metal dichalcogenides. We experimentally demonstrate an average total absorption in the visible range (450-700 nm) of >70% using <4 nm of semiconductor absorbing materials scalable over large areas with vapor phase growth techniques. Our analysis suggests that a power conversion efficiency of 15.54% and a specific power >300 W g<sup>-1</sup> may be achieved in a photovoltaic cell based on this metamaterial absorber.

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Publication Details

Journal
Nano Letters
Published
2024-10-28
DOI
https://doi.org/10.1021/acs.nanolett.4c02963
Citations
9
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.05

Funders

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article

Broadband Light Harvesting from Scalable Two-Dimensional Semiconductor Multi-Heterostructures

Jason Lynch, Shalini Kumari, Joan Marie Redwing, Sudong Wang et al.
9 citations
Nano Letters
2D Materials and Applications
1.05
article

Broadband Light Harvesting from Scalable Two-Dimensional Semiconductor Multi-Heterostructures

Jason Lynch, Shalini Kumari, Joan Marie Redwing, Sudong Wang, Zekun Hu, H. R. Zhang, Eric A. Stach, Deep Jariwala, Rajeev Kumar, Albert V. Davydov, Da Lin, Chen Chen
article en
9 citations

Abstract

Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry-Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experimental realization of an unpatterned/planar semiconductor thin-film absorber based on monolayer transition-metal dichalcogenides. We experimentally demonstrate an average total absorption in the visible range (450-700 nm) of >70% using <4 nm of semiconductor absorbing materials scalable over large areas with vapor phase growth techniques. Our analysis suggests that a power conversion efficiency of 15.54% and a specific power >300 W g<sup>-1</sup> may be achieved in a photovoltaic cell based on this metamaterial absorber.

Nano LettersVol. 24(44)
Pennsylvania State University (US), National Institute of Standards and Technology (US), California University of Pennsylvania (US), Theiss Research (US), Engineering Systems (United States) (US), National Institute of Standards (EG), Division of Materials Science and Engineering (AU), University of Pennsylvania (US)
Alfred P. Sloan Foundation, National Institute of Standards and Technology, Office of Naval Research
Openalex Percentile: Top 20%
2D Materials and Applications
1.05
DOISourceOpenAlex
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