Observation of the Goos-Hänchen shift in monolayer WSe₂ for an arbitrary linearly polarized incident light beam using weak measurement

We report, to our knowledge, the first experimental investigation of the spatial Goos-Hänchen (GH) shift at an absorbing material interface comprised of monolayer (ML) tungsten di-selenide (WSe 2 ) on a SiO 2 /Si substrate under a total internal reflection (TIR) condition. The critical angle for this design is drastically shifted to 23.31°, compared to the glass-air interface, which was at 41.3°. Utilizing the weak value amplification (WVA) approach, the behavior of spatial GH shifts at this interface with various regulating parameters such as angle of incidence, polarization angle, and post-selection angle has systematically been studied. At critical incidence, the greatest shift of approximately 116 µm exceeds the maximum limit of beam shift w 0 /2, where w 0 is the beam waist (180 µm). A generic theoretical model compatible with polarization-dependent studies is also established that has demonstrated excellent agreement with experimental results. Moreover, this work established three distinct features that allow us to readily tweak the value of spatial GH shifts. The observation of a controllable spatial GH shift at the ML WSe 2 -SiO 2 /Si configuration has potential implications for optical sensors, optical differential operation, and other photonic manipulations.