Diode and Selective Routing Functionalities Controlled by Geometry in Current-Induced Spin–Orbit Torque Driven Magnetic Domain Wall Devices

Research on current-induced domain wall (DW) motion in heavy metal/ferromagnet structures is crucial for advancing memory, logic, and computing devices. Here, we demonstrate that adjusting the angle between the DW conduit and the current direction provides an additional degree of control over the current-induced DW motion. A DW conduit with a 45° section relative to the current direction enables asymmetrical DW behavior: for one DW polarity, motion proceeds freely, while for the opposite polarity, motion is impeded or even blocked in the 45° zone, depending on the interfacial Dzyaloshinskii-Moriya interaction strength. This enables the device to function as a DW diode. Leveraging this velocity asymmetry, we designed a Y-shaped DW conduit with one input and two output branches at +45° and -45°, functioning as a DW selector. A DW injected into the junction exits through one branch, while a reverse polarity DW exits through the other, demonstrating selective DW routing.

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Publication Details

Journal
Nano Letters
Published
2024-10-27
DOI
https://doi.org/10.1021/acs.nanolett.4c03339
Citations
1
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.34

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article

Diode and Selective Routing Functionalities Controlled by Geometry in Current-Induced Spin–Orbit Torque Driven Magnetic Domain Wall Devices

M. S. Gabor, Ioan Mihai Miron, Ovidiu Pop, M. Belmeguenai et al.
1 citations
Nano Letters
Magnetic properties of thin films
0.34
article

Diode and Selective Routing Functionalities Controlled by Geometry in Current-Induced Spin–Orbit Torque Driven Magnetic Domain Wall Devices

M. S. Gabor, Ioan Mihai Miron, Ovidiu Pop, M. Belmeguenai, T. Petrişor, Elena-Mirela Stetco
article en
1 citations

Abstract

Research on current-induced domain wall (DW) motion in heavy metal/ferromagnet structures is crucial for advancing memory, logic, and computing devices. Here, we demonstrate that adjusting the angle between the DW conduit and the current direction provides an additional degree of control over the current-induced DW motion. A DW conduit with a 45° section relative to the current direction enables asymmetrical DW behavior: for one DW polarity, motion proceeds freely, while for the opposite polarity, motion is impeded or even blocked in the 45° zone, depending on the interfacial Dzyaloshinskii-Moriya interaction strength. This enables the device to function as a DW diode. Leveraging this velocity asymmetry, we designed a Y-shaped DW conduit with one input and two output branches at +45° and -45°, functioning as a DW selector. A DW injected into the junction exits through one branch, while a reverse polarity DW exits through the other, demonstrating selective DW routing.

Nano LettersVol. 24(44)
Centre National de la Recherche Scientifique (FR), Technical University of Cluj-Napoca (RO), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Sorbonne Université (FR), Université Sorbonne Paris Nord (FR), Spintronique et Technologie des Composants (FR), Université Paris 1 Panthéon-Sorbonne (FR), Université Grenoble Alpes (FR)
Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii, European Regional Development Fund, H2020 European Research Council
Affordable and clean energy
Openalex Percentile: Top 39%
Magnetic properties of thin films
0.34
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