Kinetics of electromigration mass transfer in micro- and nanoelectronics interface elements depending on the strength of thin-film junctions

The theoretical model proposed earlier by the authors, which describes the interrelation of strength and electromigration (diffusion) properties of interfaces formed by joined materials, has been perfected and extended. Within the framework of the developed model, a linear relationship between the values of the work of reversible interface separation Wa and the activation energy of electromigration in the interface HEM was established. The coefficients of the obtained relation are estimated and compared with experimental data on the study of electromigration in a copper conductors covered with protective dielectrics. Using also the model developed earlier by the authors, which describes the dependence of the value on the concentrations of non-equilibrium lattice defects in the volumes of joined materials, a number of effects due to the influence of such defects on the processes caused by electromigration have been predicted and investigated. In the paper we obtained that by introducing non-equilibrium lattice defects in the volumes of bonded materials in the form of atomic impurities of interstition or substitution it is possible to effectively influence the characteristics of electromigration instability of the shape of the interlayer interface. For the introduction impurities, quantitative analytical estimates of the impurity concentration necessary for a significant change (both increase and decrease) in the characteristic rise time of the instability of the shape of the initially flat interface have been obtained.