Effect of copper doping on zinc oxide for potential use in nanowire devices

Abstract Zinc oxide is a promising material in semiconductor research owing to its exceptional properties including wide band gap and high carrier mobility. We observe the effect of copper (a promising acceptor species) doping properties of zinc oxide using Density Functional Theory (DFT). Carrier concentration calculations reveal that the copper doping leads to a p-type semiconductor with an increase in hole concentration to the order of 10 18 cm −3 . The resultant structure is used to build junctionless nanowire transistors. These nanoscale devices exhibit excellent characteristics including a diameter-normalized on-current of more than 500 μA/μm and an on-current to off-current ratio of greater than 5 × 10 6 for select configurations. In addition, several design parameters are varied, and guidelines are presented that offer improved performance. Graphical abstract Fig. a Copper-doped zinc oxide junctionless transistor (UL represents source/drain underlap) b Cross-sectional view c Drain current vs gate voltage for one of the devices