Spin-orbit proximity in MoS2/bilayer graphene heterostructures

Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal dichalcogenides (TMDs) stands out due to its potential for inducing spin-orbit coupling (SOC) in graphene. Future devices concepts require the understanding of the precise nature of SOC in TMD/bilayer graphene heterostructures and its influence on electronic transport phenomena. Here, we experimentally confirm the presence of two distinct types of SOC - Ising (Δ<sub>I</sub> = 1.55 meV) and Rashba (Δ<sub>R</sub> = 2.5 meV) - in bilayer graphene when interfaced with molybdenum disulfide. Furthermore, we reveal a non-monotonic trend in conductivity with respect to the electric displacement field at charge neutrality. This phenomenon is ascribed to the existence of single-particle gaps induced by the Ising SOC, which can be closed by a critical displacement field. Our findings also unveil sharp peaks in the magnetoconductivity around the critical displacement field, challenging existing theoretical models.

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Publication Details

Journal
Nature Communications
Published
2024-10-26
DOI
https://doi.org/10.1038/s41467-024-53324-z
Citations
24
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
2.81

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article

Spin-orbit proximity in MoS2/bilayer graphene heterostructures

Hadrien Duprez, Leonid Levitov, Archisman Panigrahi, Munazza Gull et al.
24 citations
Nature Communications
Graphene research and applications
2.81
article

Spin-orbit proximity in MoS2/bilayer graphene heterostructures

Hadrien Duprez, Leonid Levitov, Archisman Panigrahi, Munazza Gull, Takashi Taniguchi, Kenji Watanabe, Thomas Ihn, Chuyao Tong, Michele Masseroni, K. Ensslin, Jonas D. Gerber, Markus Niese, Felix Fischer, Nils Jacobsen
article en
24 citations

Abstract

Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal dichalcogenides (TMDs) stands out due to its potential for inducing spin-orbit coupling (SOC) in graphene. Future devices concepts require the understanding of the precise nature of SOC in TMD/bilayer graphene heterostructures and its influence on electronic transport phenomena. Here, we experimentally confirm the presence of two distinct types of SOC - Ising (Δ<sub>I</sub> = 1.55 meV) and Rashba (Δ<sub>R</sub> = 2.5 meV) - in bilayer graphene when interfaced with molybdenum disulfide. Furthermore, we reveal a non-monotonic trend in conductivity with respect to the electric displacement field at charge neutrality. This phenomenon is ascribed to the existence of single-particle gaps induced by the Ising SOC, which can be closed by a critical displacement field. Our findings also unveil sharp peaks in the magnetoconductivity around the critical displacement field, challenging existing theoretical models.

Nature CommunicationsVol. 15(1)
National Institute for Materials Science (JP), ETH Zurich (CH), Massachusetts Institute of Technology (US), University of Göttingen (DE)
National Science Foundation, Graphene Flagship, Ministry of Education, Culture, Sports, Science and Technology, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, Horizon 2020 Framework Programme, Japan Society for the Promotion of Science, H2020 European Research Council
Openalex Percentile: Top 6%
Graphene research and applications
2.81
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