SuFEx‐based Transparent Polysulfates and their Applications in Tunable Resistant Electrical Memory Materials

Abstract Visibly transparent electron devices are current research highlights, which are found at the “neotype” stage of technical development for the usage in the next generation “see‐through” electronic devices. However, less attention is paid to transparent semiconductor memory devices, and hence, achieving such “see‐through” electronic devices are still partially limited by lacking the easily achievable and cost‐effective transparent memory materials. Herein, three visible light transparent polysulfate‐based memory devices are reported, e.g. ITO/P‐BPS/Al, ITO/P‐TPA/Al, and ITO/P‐TPABPS/Al, that displayed DRAM, WORM, and FLASH effects, respectively. The mechanisms of the observed memory behavior of each memory material are proposed on the basis of computational simulation. Remarkably, these polysulfates‐based memory materials are obtained by simply using different main‐chain repeating units, suggesting a wide application potential of polysulfate as functionalized materials.