Influence of Subvalent Twin-Rattler for High <i>n</i>-Type Thermoelectric Performance in Bi<sub>13</sub>S<sub>18</sub>Br<sub>2</sub> Chalcohalide
Metal chalcohalides, owing to their higher stability over halides and greater tunability of electronic features over chalcogenides, open new avenues for investigating properties of materials. Complex metal chalcohalides can be a good choice for thermoelectric studies for their halide-like low thermal conductivity and chalcogenide-like high electrical conductivity. Here, we have investigated the thermoelectric properties of <i>n</i>-type Bi<sub>13</sub>S<sub>18</sub>Br<sub>2</sub> and utilized the concept of Fajans' polarization to describe the formation of a dimer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msubsup><mml:mrow><mml:mi>Bi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:mrow></mml:msubsup></mml:math> and explained how it can help achieve high thermoelectric figure of merit (zT) of ∼1.0 at 748 K. This zT value is so far the highest-reported value for pristine metal chalcohalides. The existence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msubsup><mml:mrow><mml:mi>Bi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:mrow></mml:msubsup></mml:math> subunit in Bi<sub>13</sub>S<sub>18</sub>Br<sub>2</sub> is experimentally verified by synchrotron X-ray pair distribution function (X-PDF) analysis. The complex structure of Bi<sub>13</sub>S<sub>18</sub>Br<sub>2</sub> having a large unit cell exhibits simultaneous dimer-cation rattler (i.e., "twin-rattler"), which decreases the lattice thermal conductivity drastically. We observed evidence of such low-energy rattling vibrations from DFT-calculated eigen mode visualizations of the phonon dispersion. The subvalent nature of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msubsup><mml:mrow><mml:mi>Bi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:mrow></mml:msubsup></mml:math>accommodates an extra electron in <i>Bi</i>(<i>6p</i><sub><i>z</i></sub>) orbital, which helps form a weakly dispersed donor band just below the Fermi energy (<i>E</i><sub>F</sub>), leading to a significant reduction in band gap (0.77 eV), which is favorable for high thermoelectric performance. Consequently, we obtained a semiconducting nature of <i>n</i>-type Bi<sub>13</sub>S<sub>18</sub>Br<sub>2</sub> with moderate electrical conductivity, as well as a high Seebeck coefficient. Our investigation presents the importance of fundamental chemistry in thermoelectrics and demonstrates the influence of subvalent twin-rattler in triggering high thermoelectric performance in metal chalcohalides.
Authors
- Koyendrila Debnath
- Subarna Das (ORCID: https://orcid.org/0000-0002-2783-051X)
- Umesh V. Waghmare (ORCID: https://orcid.org/0000-0002-9378-155X)
- Ivy Maria (ORCID: https://orcid.org/0009-0001-3640-9364)
- Diptikanta Swain (ORCID: https://orcid.org/0000-0003-4048-5017)
- Kanishka Biswas (ORCID: https://orcid.org/0000-0001-9119-2455)
- Prabir Dutta (ORCID: https://orcid.org/0000-0002-8094-4372)
- Anustoop Das (ORCID: https://orcid.org/0009-0007-8872-9769)
Institutions
- Jawaharlal Nehru Centre for Advanced Scientific Research (IN)
- Institute of Chemical Technology (IN)
- International Centre for Advanced Materials (United Kingdom) (GB)
- Indian Institute of Technology Bhubaneswar (IN)
Publication Details
- Journal
- Journal of the American Chemical Society
- Published
- 2024-10-25
- DOI
- https://doi.org/10.1021/jacs.4c11738
- Citations
- 18
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 2.11
Funders
- Department of Science and Technology, Ministry of Science and Technology, India
- Council of Scientific and Industrial Research, India
- Jawaharlal Nehru Centre for Advanced Scientific Research
- Science and Engineering Research Board