Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices

Coherent manipulation of electron spins is one of the central challenges of silicon-based quantum computing efforts. Electron spin resonance (ESR) lines, or Oersted lines, allow 10–60 GHz radio frequency (RF) pulses to induce an electromagnetic field that drives Rabi oscillations in a quantum dot interface. The frequency of these Rabi oscillations is directly proportional to the strength of the induced electromagnetic field. We outline a methodology for the design of a printed circuit board and an ESR line that is able to transmit an RF pulse in the 40 GHz regime and induce an oscillating magnetic field onto a qubit device. We propose and implement a novel design by coupling a second symmetrical Oersted line in the opposing direction of the first to act as an antenna for the purpose of monitoring power and magnetic field strength at the embedded device interface.

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Publication Details

Journal
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
Published
2024-10-25
DOI
https://doi.org/10.1116/6.0004051
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
0.00

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article

Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices

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Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
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article

Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices

Utsav, Jonathan Wyrick, Pradeep Namboodiri, Ranjit V. Kashid, Alessandro Restelli, Vijith K. Pulikodan, Richard M. Silver, Xiqiao Wang, Fan Fei, Mark-Yves Gaunin, Brian Courts
article en

Abstract

Coherent manipulation of electron spins is one of the central challenges of silicon-based quantum computing efforts. Electron spin resonance (ESR) lines, or Oersted lines, allow 10–60 GHz radio frequency (RF) pulses to induce an electromagnetic field that drives Rabi oscillations in a quantum dot interface. The frequency of these Rabi oscillations is directly proportional to the strength of the induced electromagnetic field. We outline a methodology for the design of a printed circuit board and an ESR line that is able to transmit an RF pulse in the 40 GHz regime and induce an oscillating magnetic field onto a qubit device. We propose and implement a novel design by coupling a second symmetrical Oersted line in the opposing direction of the first to act as an antenna for the purpose of monitoring power and magnetic field strength at the embedded device interface.

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and PhenomenaVol. 42(6)
National Institute of Standards and Technology (US), Physical Measurement Laboratory (US), Centre for Materials for Electronics Technology (IN), Joint Quantum Institute (US), Rigetti Computing (United States) (US), Materials Technology (United Kingdom) (GB), University of Maryland, College Park (US)
U.S. Department of Energy
Affordable and clean energy
Openalex Percentile: Top 83%
Quantum and electron transport phenomena
DOISourceOpenAlex
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