Direct One-Stage Plasma Chemical Synthesis of Nanostructured Thin Films of the System β-Ga<sub>2</sub>O<sub>3</sub>-GaN of Different Composition

For the first time, nanostructured thin films of the β-Ga2O3−GaN system were obtained by plasma chemical deposition from the gas phase (PECVD) on c-sapphire substrates. High-purity metallic gallium, as well as high-purity gaseous nitrogen and oxygen were used as sources of macro components. The low-temperature nonequilibrium plasma of an inductively coupled HF (40.68 MHz) discharge at a reduced pressure (0.01 Torr) was the initiator of chemical transformations between the starting substances. A mixture of oxygen and nitrogen was used as a plasma-forming gas. The plasma chemical process was studied using the optical emission spectroscopy (OES) method. The obtained thin films of the β-Ga2O3−GaN system with a GaN phase content of 2 to 7% were characterized by various analytical methods.