Current Progress of EUV Spectral Responsivity Calibration for EUV Lithography at CMS/ITRI

Abstract To support the development of advanced EUV lithography for the semiconductor industry in Taiwan, a calibration system for photodiodes’ spectral responsivity was established. The current system utilizes the synchrotron radiation light source and the method is traceable to PTB, Germany. The wavelength range is from 10 nm to 15 nm, including the most often used 13.5 nm. Several techniques were studied to compensate for light source fluctuation and to reduce the measurement uncertainty. The relative expanded uncertainty of the spectral responsivity calibration at 13.5 nm is 4.6 % ( k =2). A wafer-type EUV radiant power meter designed to be used in EUV lithography chambers is being developed. Our goal is to develop simple and reliable methods for on-site EUV optical power measurement and dose estimation.

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Publication Details

Journal
Journal of Physics Conference Series
Published
2024-10-01
DOI
https://doi.org/10.1088/1742-6596/2864/1/012004
Primary Topic
Advancements in Photolithography Techniques
Type
article
Field-Weighted Citation Impact
0.00

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article

Current Progress of EUV Spectral Responsivity Calibration for EUV Lithography at CMS/ITRI

Cheng‐Hsien Chen, Yi-Chen Chuang
Journal of Physics Conference Series
Advancements in Photolithography Techniques
article

Current Progress of EUV Spectral Responsivity Calibration for EUV Lithography at CMS/ITRI

Cheng‐Hsien Chen, Yi-Chen Chuang
article en

Abstract

Abstract To support the development of advanced EUV lithography for the semiconductor industry in Taiwan, a calibration system for photodiodes’ spectral responsivity was established. The current system utilizes the synchrotron radiation light source and the method is traceable to PTB, Germany. The wavelength range is from 10 nm to 15 nm, including the most often used 13.5 nm. Several techniques were studied to compensate for light source fluctuation and to reduce the measurement uncertainty. The relative expanded uncertainty of the spectral responsivity calibration at 13.5 nm is 4.6 % ( k =2). A wafer-type EUV radiant power meter designed to be used in EUV lithography chambers is being developed. Our goal is to develop simple and reliable methods for on-site EUV optical power measurement and dose estimation.

Journal of Physics Conference SeriesVol. 2864(1)
Industrial Technology Research Institute (TW)
National Synchrotron Radiation Research Center
Industry, innovation and infrastructure
Openalex Percentile: Top 83%
Advancements in Photolithography Techniques
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Current Progress of EUV Spectral Responsivity Calibration for EUV Lithography at CMS/ITRI — Cheng‐Hsien Chen, Yi-Chen Chuang · Journal of Physics Conference Series (2024) | TGRS Research Map | TGRS