Enhanced Performance of NiO/β-Ga₂O₃ Heterojunction Photodetector via Piranha Treatment and Its Application to Solar-Blind Communication
In this work, we demonstrated a high-performance NiO/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 heterojunction photodetector using piranha solution pretreatment technology. After treatment, the NiO/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 heterojunction exhibited an excellent electrical performance, including a higher on/off ratio of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1\times 10^{{7}}$ </tex-math></inline-formula>, a lower reverse current of 0.28 pA, and an improved ideal factor. Additionally, the solar-blind detection performance of treated sample was significantly enhanced, including a 2900% increase in photo-to-dark-current ratio (PDCR), a 140% increase in responsivity, and a 900% increase in detectivity. Notably, excellent rise time and decay time were observed to be 60 and 50 ms after treatment, demonstrating an impressive reduction of 97% and 98%, respectively. This fast response characteristic has a wide range of applications. Thus, we conducted an optical communication test based on an original solar-blind communication system. Data transmission was successfully achieved ten times with a short sampling time of 100 ms. These results illustrate the effectiveness of piranha solution pretreatment in elevating the performance of Ga2O3-based heterojunction photodetector.
Authors
- Liru Zeng
- Dinghe Liu (ORCID: https://orcid.org/0009-0001-2866-9238)
- Chunxiang Zhu (ORCID: https://orcid.org/0000-0002-6548-5366)
- Zeyulin Zhang (ORCID: https://orcid.org/0000-0001-7801-8380)
- Dazheng Chen (ORCID: https://orcid.org/0000-0001-8152-4313)
- Chunfu Zhang (ORCID: https://orcid.org/0000-0001-9555-3377)
- Xiaoli Lu (ORCID: https://orcid.org/0000-0003-3689-5996)
- Qian Feng (ORCID: https://orcid.org/0000-0001-7655-2600)
- Hong Zhou (ORCID: https://orcid.org/0000-0002-0741-7568)
- Wei Wei (ORCID: https://orcid.org/0000-0003-2918-7107)
- Jincheng Zhang (ORCID: https://orcid.org/0000-0001-7332-6704)
- Yue Hao (ORCID: https://orcid.org/0000-0002-8081-2919)
- Hao Chen (ORCID: https://orcid.org/0000-0003-0482-8940)
- Yiru Yan (ORCID: https://orcid.org/0000-0001-7836-2085)
Institutions
- Xidian University (CN)
- National University of Singapore (SG)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-10-25
- DOI
- https://doi.org/10.1109/ted.2024.3479161
- Citations
- 5
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.59
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China