Improving electron injection of organic light-emitting transistors <i>via</i> interface layer design

Ambipolar transport is crucial for constructing high performance organic light-emitting transistors (OLETs), but the ambipolar feature is usually not exhibited due to ineffective electron injection especially in symmetric device geometry. Herein, we show that electron injection could be greatly enhanced through the judicious design of an organic interface layer of 3,7-di(2-naphthyl)dibenzothiophene <i>S</i>,<i>S</i>-dioxide (DNaDBSO) which shows an interfacial dipole effect upon contact with a metal electrode, especially an Au electrode. When incorporating a DNaDBSO film beneath Au electrodes, the electron injection and mobility were significantly enhanced in 2,6-diphenylanthracene-based OLETs, and thus ambipolar transport (<i>μ</i>maxh: 2.17 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>, <i>μ</i>maxe: 0.053 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>) was effortlessly obtained. Furthermore, the shift of the electroluminescent region was obviously observed upon modulation of gate voltage, which demonstrates efficient electron injection and intrinsic ambipolar transporting properties in devices. This study provides a new avenue for regulating the interface in electroluminescent devices towards high performance simple-structured OLETs in applications.

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Publication Details

Journal
Materials Horizons
Published
2024-10-25
DOI
https://doi.org/10.1039/d4mh00870g
Citations
4
Primary Topic
Organic Light-Emitting Diodes Research
Type
article
Field-Weighted Citation Impact
0.83

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article

Improving electron injection of organic light-emitting transistors via interface layer design

Zhengsheng Qin, Yu Lei, Qingbin Li, Xiangyu Tan et al.
4 citations
Materials Horizons
Organic Light-Emitting Diodes Research
0.83
article

Improving electron injection of organic light-emitting transistors via interface layer design

Zhengsheng Qin, Yu Lei, Qingbin Li, Xiangyu Tan, Zhagen Miao, Xianneng Chen, Ziyi Xie, Wenping Hu, Zhenling Liu, Pengsong Wang, Huanli Dong, Hao‐Li Zhang, Yu Zhang, Yumin Liu, Dan Liŭ, Can Gao, Pu Wang
article en
4 citations

Abstract

Ambipolar transport is crucial for constructing high performance organic light-emitting transistors (OLETs), but the ambipolar feature is usually not exhibited due to ineffective electron injection especially in symmetric device geometry. Herein, we show that electron injection could be greatly enhanced through the judicious design of an organic interface layer of 3,7-di(2-naphthyl)dibenzothiophene <i>S</i>,<i>S</i>-dioxide (DNaDBSO) which shows an interfacial dipole effect upon contact with a metal electrode, especially an Au electrode. When incorporating a DNaDBSO film beneath Au electrodes, the electron injection and mobility were significantly enhanced in 2,6-diphenylanthracene-based OLETs, and thus ambipolar transport (<i>μ</i>maxh: 2.17 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>, <i>μ</i>maxe: 0.053 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>) was effortlessly obtained. Furthermore, the shift of the electroluminescent region was obviously observed upon modulation of gate voltage, which demonstrates efficient electron injection and intrinsic ambipolar transporting properties in devices. This study provides a new avenue for regulating the interface in electroluminescent devices towards high performance simple-structured OLETs in applications.

Materials HorizonsVol. 12(5)
Tianjin University (CN), Chinese Academy of Sciences (CN), Beijing National Laboratory for Molecular Sciences (CN), Unité Matériaux et Transformations (FR), Institute of Chemistry (CN), State Key Laboratory of Applied Organic Chemistry, Lanzhou University (CN)
National Natural Science Foundation of China, Ministry of Science and Technology of the People's Republic of China, China Postdoctoral Science Foundation, Higher Education Discipline Innovation Project, Beijing National Laboratory for Molecular Sciences
Openalex Percentile: Top 26%
Organic Light-Emitting Diodes Research
0.83
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