Cycle-by-Cycle Optimized Active Gate Drive for SiC MOSFETs

Recently, active gate drivers (AGD) have been proposed as a solution to regulate fast switching for Silicon carbide (SiC) MOSFETs. This paper explores the optimization and optimum control of AGD for SiC MOSFETs to improve efficiency and potentially reduce electromagnetic interference (EMI) through adaptive switching strategies. It presents a comparative analysis of two AGD methods, pullback-like and staircase-like sequences, highlighting their impact on switching dynamics and EMI mitigation. By utilizing simulation models, the study evaluates the feasibility of pre-mapping and multi-objective optimization for real-time control and investigates the theoretical spectral amplitude calculation to achieve targeted EMI attenuation. The research outlines the use of two switching optimization approaches, and applies them to a three-phase inverter scenario, aiming to demonstrate the advantages of optimized AGD over conventional methods. This study in general focuses on advanced gate-driving techniques for power electronics giving the guidelines for future research in gate-driving strategies.