Measurement procedure to generate a GaN power transistor surrogate model at GHz frequencies

Efficiency, power density and cost savings play an important role in power electronics. The use of semiconductors with a wide band gap (WBG) leads to higher efficiency in power systems. The faster switching slopes of WBG semiconductors generate higher emissions. There are various approaches for modeling these semiconductors. They are inaccurate at frequencies above 100 MHz. Our approach is to predict the signals by using surrogate models. This article presents a measurement setup with a procedure for generating data for a GHz surrogate transistor model. In the setup, up to 6 different operation parameters can be changed during the measurements: Drain voltage, gate voltage, switching frequency, switching edges, low frequency loads and high frequency loads. This enables us to generate different operating conditions for the transistor to be analyzed. In this paper, we discuss the measured spectrum of the proposed circuit at frequencies around 600 MHz.