An EMC-Investigation on Dead Time Distortion of SiC Based Half Bridge LLC Resonant Inverter

To guarantee the safe operation of switching devices and accomplish zero voltage switching (ZVS), it is crucial to determine the dead time in a half-bridge LLC resonant inverter. When the resonant inverter fails to meet the ZVS boundary, the voltage reversal occurs across the switching devices with high voltage/current transitions leading to the distortion event. This work provides the opportunity to investigate the electromagnetic compatibility (EMC) issues of the half bridge LLC resonant inverter in the context of varying dead time. Hardware results from an experimental setup demonstrate the impact of dead time distortion on the switching device and their correlation with EMC challenges, which are validated by measurements performed in an anechoic chamber.

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Published
2024-09-02
DOI
https://doi.org/10.1109/emceurope59828.2024.10722598
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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article

An EMC-Investigation on Dead Time Distortion of SiC Based Half Bridge LLC Resonant Inverter

Stefan Dickmann, M. Ravi Sankar, Klaus F. Hoffmann, Simon Podendorf
Silicon Carbide Semiconductor Technologies
article

An EMC-Investigation on Dead Time Distortion of SiC Based Half Bridge LLC Resonant Inverter

Stefan Dickmann, M. Ravi Sankar, Klaus F. Hoffmann, Simon Podendorf
article en

Abstract

To guarantee the safe operation of switching devices and accomplish zero voltage switching (ZVS), it is crucial to determine the dead time in a half-bridge LLC resonant inverter. When the resonant inverter fails to meet the ZVS boundary, the voltage reversal occurs across the switching devices with high voltage/current transitions leading to the distortion event. This work provides the opportunity to investigate the electromagnetic compatibility (EMC) issues of the half bridge LLC resonant inverter in the context of varying dead time. Hardware results from an experimental setup demonstrate the impact of dead time distortion on the switching device and their correlation with EMC challenges, which are validated by measurements performed in an anechoic chamber.

Helmut Schmidt University (DE)
Openalex Percentile: Top 83%
Silicon Carbide Semiconductor Technologies
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An EMC-Investigation on Dead Time Distortion of SiC Based Half Bridge LLC Resonant Inverter — Stefan Dickmann, M. Ravi Sankar, et al. · (2024) | TGRS Research Map | TGRS