An EMC-Investigation on Dead Time Distortion of SiC Based Half Bridge LLC Resonant Inverter
To guarantee the safe operation of switching devices and accomplish zero voltage switching (ZVS), it is crucial to determine the dead time in a half-bridge LLC resonant inverter. When the resonant inverter fails to meet the ZVS boundary, the voltage reversal occurs across the switching devices with high voltage/current transitions leading to the distortion event. This work provides the opportunity to investigate the electromagnetic compatibility (EMC) issues of the half bridge LLC resonant inverter in the context of varying dead time. Hardware results from an experimental setup demonstrate the impact of dead time distortion on the switching device and their correlation with EMC challenges, which are validated by measurements performed in an anechoic chamber.
Authors
- Stefan Dickmann
- M. Ravi Sankar (ORCID: https://orcid.org/0000-0003-2664-5504)
- Klaus F. Hoffmann
- Simon Podendorf
Institutions
- Helmut Schmidt University (DE)
Publication Details
- Published
- 2024-09-02
- DOI
- https://doi.org/10.1109/emceurope59828.2024.10722598
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00