Conducted Emissions of an upto 2.3 kW Interleaved SiC Buck Converter under Varied Operative Conditions
Wide band gap semiconductors such as siliconcarbide (SiC)-based devices are favored in the power electronic industry for their reduced switching losses. However, their utilization leads to high $\mathrm{d} V_{\mathrm{DS}} / \mathrm{d} t$, causing high-frequency emissions that can affect the operation of connected devices and systems on the board net. This study investigates conducted emissions originating from the output lines of a laboratory adaptation of an automotive interleaved buck converter, interfacing the traction battery of an electric vehicle with 48 V board net, along with monitoring the chip temperature of the SiC MOSFET. Across various combinations of input and output characteristics and operation modes, differences in common and differential mode emission spectra and their comparison with CISPR-25 standard limits, are observed. A study is further done to analyze these experimental results.
Authors
- Saili S. Kulkarni (ORCID: https://orcid.org/0000-0001-8133-7980)
- Stefan Dickmann
- Erik Kampert (ORCID: https://orcid.org/0000-0002-7159-8578)
- Klaus F. Hoffmann
- Mike Wendt (ORCID: https://orcid.org/0000-0003-4019-4594)
- Sönke Brandt
Institutions
- Helmut Schmidt University (DE)
Publication Details
- Published
- 2024-09-02
- DOI
- https://doi.org/10.1109/emceurope59828.2024.10722307
- Citations
- 1
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21