A Comprehensive and Comparative Study of Different Motor Drive Topologies Based on 1.2 kV- and 1.7 kV-SiC MOSFETs for Off-highway EV Applications
As the on-road electric vehicles (EVs) continue to mature, electrification of off-highway vehicles is getting more attention. The emergence of new-generation wide-bandgap (WBG) devices offers promising potential to revolutionize heavy-duty off-highway vehicle applications. This paper investigates the impact of 1.2 kV and 1.7 kV SiC devices on the design and performance of motor drives in off-highway vehicles. The SiC devices with higher voltage also open the opportunity to increase the DC-link voltage. Furthermore, two surface permanent magnet (SPM) machines are designed to operate with different DC-link voltages. A comprehensive comparison of different motor drive topologies for off-highway applications is conducted, including 2-level VSIs and 3-level T-type inverters, with different DC-link voltages associated with 1.2 kV and 1.7 kV SiC devices. The results provide insight into the advantages of higher voltage power architecture and show that the 2-level VSI using 1.7 kV SiC MOSFETs is a good candidate topology for off-highway vehicle applications.
Authors
- Wenda Feng
- Thomas M. Jahns (ORCID: https://orcid.org/0000-0002-6952-4123)
- Bulent Sarlioglu (ORCID: https://orcid.org/0000-0003-3327-3606)
- Sangwhee Lee (ORCID: https://orcid.org/0000-0003-3549-0057)
- Feida Chen (ORCID: https://orcid.org/0000-0001-6862-2111)
Institutions
- University of Wisconsin–Madison (US)
Publication Details
- Published
- 2024-09-30
- DOI
- https://doi.org/10.1109/pemc61721.2024.10726415
- Citations
- 1
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21