An optimal dual active bridge converter modulation strategy for optimal loss distribution and reduction

The paper shows that the state of the art dual active bridge modulation strategies do not distribute the losses evenly on the power semiconductors. When employing MOSFET, only the conduction losses are evenly balanced, when employing IGBT and diodes both conduction and switching losses are unbalanced. The present paper proposes a new modulation method that distributed the losses optimally on the power semiconductors. This allows reducing the peak junction temperature by a significant amount and reducing the overall power semiconductor losses by some non negligible amount. The effectiveness of the scheme is shown in simulation. The feasibility is demonstrated experimentally.