A 24–64 GHz Wideband Static CML Frequency Divider in a 90-nm CMOS Technology

This letter presents a divide-by-2 static current-mode logic (CML) frequency divider with inductive peaking. While inductive peaking frequency dividers feature a high-Q resonator that limits the operation range, a frequency tuning technique has been implemented to extend the operation range. An nMOS transistor pair has been employed at the source of the cross-coupled pair to adjust the current flow and output node capacitance, thereby modifying the frequency divider’s operation range. Fabricated in 90-nm CMOS, the frequency divider occupies a core chip area of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$170\times 240~\mu $ </tex-math></inline-formula>m2 and achieves an operation range of 90.9% (24–64 GHz). It dissipates a maximum dc power of 30.1 mW from a 1.2 V supply voltage.

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Publication Details

Journal
IEEE Microwave and Wireless Technology Letters
Published
2024-10-25
DOI
https://doi.org/10.1109/lmwt.2024.3479166
Citations
6
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
1.25

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article

A 24–64 GHz Wideband Static CML Frequency Divider in a 90-nm CMOS Technology

Abinash Patnaik, Daekeun Yoon
6 citations
IEEE Microwave and Wireless Technology Letters
Radio Frequency Integrated Circuit Design
1.25
article

A 24–64 GHz Wideband Static CML Frequency Divider in a 90-nm CMOS Technology

Abinash Patnaik, Daekeun Yoon
article en
6 citations

Abstract

This letter presents a divide-by-2 static current-mode logic (CML) frequency divider with inductive peaking. While inductive peaking frequency dividers feature a high-Q resonator that limits the operation range, a frequency tuning technique has been implemented to extend the operation range. An nMOS transistor pair has been employed at the source of the cross-coupled pair to adjust the current flow and output node capacitance, thereby modifying the frequency divider’s operation range. Fabricated in 90-nm CMOS, the frequency divider occupies a core chip area of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$170\times 240~\mu $ </tex-math></inline-formula>m2 and achieves an operation range of 90.9% (24–64 GHz). It dissipates a maximum dc power of 30.1 mW from a 1.2 V supply voltage.

IEEE Microwave and Wireless Technology LettersVol. 35(1)
National Yang Ming Chiao Tung University (TW)
Kumoh National Institute of Technology
Affordable and clean energy
Openalex Percentile: Top 20%
Radio Frequency Integrated Circuit Design
1.25
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