Single Step Processing of an Integrated FGM BaTiO<sub>3</sub>-Ni Capacitor for Power Modules’ Assembly
The miniaturization of power electronic devices is pushing manufacturers to improve the multifunctionality of components. Obtaining new materials with heterogeneous electrical properties is a challenge. In this work, the objective is to prepare, in a single step processing, a ceramic capacitor, including a thick metallization. This device will be a first step toward its integration in a power module. The assembly of a metal and ceramics is a challenge due to the difference of properties of these materials. A new BaTiO3-Ni functionally graded material (FGM) has been obtained by spark plasma sintering (SPS) co-sintering. The processing parameters of the BaTiO3-Ni FGM are optimized to target highly dense material with controlled microstructure. In this case, a crack free device is obtained with controlled dielectric properties and can be integrated in a power module device. The processing leading to the fabrication of this FGM in one step can be used for other components in power electronics applications.
Authors
- Pascal Dufour (ORCID: https://orcid.org/0000-0001-8403-0685)
- Geoffroy Chevallier (ORCID: https://orcid.org/0000-0002-5398-5750)
- Paul-Étienne Vidal (ORCID: https://orcid.org/0000-0001-6878-2377)
- Donatien Martineau (ORCID: https://orcid.org/0000-0003-1876-8061)
- Cyrille Duchesne
- Romain Raisson (ORCID: https://orcid.org/0009-0003-5943-2326)
- Sophie Guillemet-Fritsch
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université Toulouse III - Paul Sabatier (FR)
- Université de Pau et des Pays de l'Adour (FR)
- University of Concepción (CL)
- Toulouse Mathematics Institute (FR)
- Laboratoire Génie de Production (FR)
- Safran Electronics (Canada) (CA)
- Centre Interuniversitaire de Recherche et d’Ingénierie des Matériaux (FR)
- Safran (France) (FR)
Publication Details
- Journal
- IEEE Transactions on Dielectrics and Electrical Insulation
- Published
- 2024-10-25
- DOI
- https://doi.org/10.1109/tdei.2024.3486677
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21