Comparisons between the Direct and Indirect Effect of 1.5 keV X-rays and 0–30 eV Electrons on DNA: Base Lesions, Stand Breaks, Cross-Links, and Cluster Damages

The interaction of low energy electrons (LEEs; 1-30 eV) with genomic material can induce multiple types of damage that may cause the loss of genetic information, mutations, genome instability, and cell death. For all damages measurable by electrophoresis, we provide the first complete set of <i>G</i>-values (yield of a specific product per energy deposited) induced in plasmid DNA by the direct and indirect effects of LEEs (<i>G</i><sub>LEE</sub>) and 1.5 keV X-rays (<i>G</i><sub>X</sub>) under identical conditions. Low energy photoelectrons are produced via X-rays incident on a tantalum (Ta) substrate covered with DNA and placed in a chamber filled with nitrogen at atmospheric pressure, under four different humidity levels, ranging from dry conditions to full hydration (Γ = 2.5 to Γ = 33, where Γ is the number of water molecules/nucleotide). Damage yields are measured as a function of X-ray fluence and humidity. <i>G</i><sub>LEE</sub> values are between 2 and 27 times larger than those for X-rays. At Γ = 2.5 and 33, <i>G</i><sub>LEE</sub> values for double strand breaks are 27 and 16 times larger than <i>G</i><sub>X</sub>, respectively. The indirect effect contributes ∼50% to the total damage. These <i>G</i>-values allow quantification of potentially lethal lesions composed of strand breaks and/or base damages in the presence of varying amounts of water, i.e., closer to cellular conditions.

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Publication Details

Journal
The Journal of Physical Chemistry B
Published
2024-10-25
DOI
https://doi.org/10.1021/acs.jpcb.4c02799
Citations
6
Primary Topic
DNA Repair Mechanisms
Type
article
Field-Weighted Citation Impact
1.40

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article

Comparisons between the Direct and Indirect Effect of 1.5 keV X-rays and 0–30 eV Electrons on DNA: Base Lesions, Stand Breaks, Cross-Links, and Cluster Damages

Léon Sanche, Wenyue Su, Yanfang Dong, Yi Zheng et al.
6 citations
The Journal of Physical Chemistry B
DNA Repair Mechanisms
1.40
article

Comparisons between the Direct and Indirect Effect of 1.5 keV X-rays and 0–30 eV Electrons on DNA: Base Lesions, Stand Breaks, Cross-Links, and Cluster Damages

Léon Sanche, Wenyue Su, Yanfang Dong, Yi Zheng, Yingxia Gao, Xuran Wang, Pierre Cloutier
article en
6 citations

Abstract

The interaction of low energy electrons (LEEs; 1-30 eV) with genomic material can induce multiple types of damage that may cause the loss of genetic information, mutations, genome instability, and cell death. For all damages measurable by electrophoresis, we provide the first complete set of <i>G</i>-values (yield of a specific product per energy deposited) induced in plasmid DNA by the direct and indirect effects of LEEs (<i>G</i><sub>LEE</sub>) and 1.5 keV X-rays (<i>G</i><sub>X</sub>) under identical conditions. Low energy photoelectrons are produced via X-rays incident on a tantalum (Ta) substrate covered with DNA and placed in a chamber filled with nitrogen at atmospheric pressure, under four different humidity levels, ranging from dry conditions to full hydration (Γ = 2.5 to Γ = 33, where Γ is the number of water molecules/nucleotide). Damage yields are measured as a function of X-ray fluence and humidity. <i>G</i><sub>LEE</sub> values are between 2 and 27 times larger than those for X-rays. At Γ = 2.5 and 33, <i>G</i><sub>LEE</sub> values for double strand breaks are 27 and 16 times larger than <i>G</i><sub>X</sub>, respectively. The indirect effect contributes ∼50% to the total damage. These <i>G</i>-values allow quantification of potentially lethal lesions composed of strand breaks and/or base damages in the presence of varying amounts of water, i.e., closer to cellular conditions.

The Journal of Physical Chemistry BVol. 128(45)
Université de Sherbrooke (CA), Henan University of Science and Technology (CN), Fuzhou University (CN)
Canadian Institutes of Health Research, Natural Sciences and Engineering Research Council of Canada
Openalex Percentile: Top 18%
DNA Repair Mechanisms
1.40
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