Enhanced High‐Performance β‐Ray Detectors Based on GaN Multi‐Quantum Well Structures

Abstract β‐ray detectors are crucial to ensure personnel safety, maintain the reliability of equipment and materials, and support scientific research and medical applications, current devices face challenges in sensitivity and stability. This study addresses these issues by demonstrating a β‐ray detector based on GaN multi‐quantum well (MQW) structures, which are expected to offer improved performance over existing technologies. Using a custom‐developed electron irradiation source, the performance of the β‐ray detector is systematically evaluated across a range of electron energies (5–50 keV) and irradiation intensities (0–50 mCi cm − 2 ). At an acceleration voltage of 20 kV, the detectors demonstrate a high sensitivity of 2.68 ± 0.08 nA mCi −1 and exhibit a current variation of 126.4 nA under 50 mCi irradiation. Notably, the detectors maintain excellent detection performance with optimal response observed at 20 keV even in an unbiased state. These results underscore the capability of detectors to effectively convert irradiation energy into electrical signals, addressing the limitations of current β‐ray detectors and demonstrating their potential for advanced radiation detection applications. The insights gained from this study are pivotal for optimizing GaN MQW‐based β‐ray detectors and advancing their use in high‐performance radiation monitoring technologies.