Microscopic analysis of low but stable perovskite solar cell device performance using electron spin resonance

Perovskite solar cells have attracted much attention as next-generation solar cells. However, a typical hole-transport material, spiro-OMeTAD, has associated difficulties including tedious synthesis and high cost. To overcome these shortcomings, an easily synthesized and low-cost hole-transport material has been developed: HND-2NOMe. Although HND-2NOMe has high local charge mobility because of the quasi-planar structure, its lower device performance is a weak point, the cause of which has not yet been clarified. Here, we analyse the source of the lower performance by clarifying the internal states from a microscopic viewpoint using electron spin resonance. We observe hole diffusion from perovskite to HND-2NOMe under dark conditions, indicating hole barrier formation at the perovskite/HND-2NOMe interface, leading to lower performance. Although such a barrier is formed, less hole accumulation for the HND-2NOMe-based cells under solar irradiation occurs, which is related to the stable performance. The sources of the lower but stable performance are crucially important for providing guidelines for improving the device performance. Hole-transport materials possessing high charge mobility are important in perovskite solar cells but the source of lower performance remains a mystery. Here, the microscopic mechanism for low but stable perovskite solar cell performance using these materials is analysed using electron spin resonance.