Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs
In this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated. The RF figures of merit (the cut-off frequency <i>f<sub>T</sub></i>, maximum oscillation frequency <i>f<sub>max</sub></i>) show significant degradation of approximately 14.1% and 6.8%, respectively. The variation of the small-signal parameters (output conductance (<i>g<sub>ds</sub></i>), transconductance (<i>g<sub>m</sub></i>), reflection coefficient (|Γ<sub>in</sub>|), and capacitance (<i>C<sub>gg</sub></i>)) at different TID levels has been discussed. TID-induced trapped charges in the gate oxide and buried oxide increase the vertical channel field, which leads to more complex degradation of small-signal parameters across a wide frequency range.
Authors
- Menghao Huang
- Shulong Wang (ORCID: https://orcid.org/0000-0002-8560-2478)
- Chang Liu (ORCID: https://orcid.org/0000-0003-1829-0838)
- Hongxia Liu (ORCID: https://orcid.org/0000-0003-4547-0666)
- Shupeng Chen (ORCID: https://orcid.org/0000-0002-6220-7061)
- Junjie Huang
- Xilong Zhou
- Zhanpeng Yan
Institutions
- Xidian University (CN)
- China Electronic Product Reliability and Environmental Test Institute (CN)
Publication Details
- Journal
- Micromachines
- Published
- 2024-10-24
- DOI
- https://doi.org/10.3390/mi15111292
- Citations
- 2
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- National Natural Science Foundation of China