Comprehensive Analysis of SEU and Vth shifts of 18nm FinFET and 45nm MOSFET devices against Radiation Effects

A detailed comparison between 18nm FinFET and 45 nm MOSFET technologies, focusing on their power consumption, propagation delay, and resilience to Single Event Upsets (SEU) and Threshold Voltage ($\mathrm{V}_{\text {th }}$) shifts are assessed. To evaluate their performance under radiation exposure, few Radiation-Hardened by Design (RHBD) techniques are implemented. RHBD is essential for ensuring the durability of electronic components in high-radiation environments such as outer space and nuclear reactors. By employing RHBD methodologies and physical design improvements, both FinFET and MOSFET technologies can enhance their resistance to radiation-induced phenomena like single event upsets and total ionizing dose. This study highlights the use of high and low threshold voltage devices in RHBD to mitigate the effects of TID and SEU. Additionally, the impact of threshold voltage shifting on SEU occurrence, utilizing these insights to design inverters with 18nm FinFET and 45 nm technologies are examined. The research emphasizes the critical role of RHBD in maintaining the functionality of semiconductor devices in radiation-prone environments and compares the performance degradation between FinFET and MOSFET devices. The findings offer valuable guidance for engineers and researchers aiming to improve the reliability and performance of future semiconductor technologies and application-specific integrated circuits.