Advancements in Tunnel Field-Effect Transistor Structures for Biosensing Applications: A Comprehensive Survey

This work explores novel Tunnel Field Effect Transistor (TFET) configurations specifically designed for biosensing applications. TFET-based biosensors have become increasingly important as the need for accurate and dependable diagnostic solutions grows. TFETs are known for their high subthreshold swing and low power consumption, which are achieved by the effective reduction of short channel effects. Another benefit is that they can identify biomolecules without the requirement for tagging.However, there are a number of issues with typical TFET designs. These include low on-current (Ion), low sensitivity because of subthreshold swing restrictions, and low on-off ratio because of random dopant fluctuation and ambipolarity behavior. Furthermore, there are major fabrication challenges associated with these structures. This work explores these problems in TFETs for biosensing and highlights the advantages of innovative TFET topologies over conventional devices. The review finds that incorporating innovative design techniques such as junction-free, ferroelectric materials, and dielectric engineering significantly improves the electrical behaviour, thereby enhancing the sensitivity of biosensors.