Research of A 4H-SiC MOSFET with Thick Oxide Layer and Split Gate Structure

With the rapid development of SiC power semiconductor devices, SiC MOSFETs with fast switching speeds have been widely used and investigated because of their excellent electrical performance, but there are still limitations in their design and process. For example, the early failure of the gate oxide layer at the base of the trench gate, along with the issue of high power consumption during switching. These problems are also the current hotspots in the research of SiC power devices. In order to resolve these challenges, a trench-gate 4H-SiC MOSFET structure (LG-UMOS) with a thick oxide layer and a split gate design has been suggested. Its internal mechanisms and electrical properties have been examined through simulation.