Super-Lamination HZO/ZrO₂/HZO of Ferroelectric Memcapacitors With Morphotropic Phase Boundary (MPB) for High Capacitive Ratio and Non-Destructive Readout
High Zr concentration of super-lamination (SL) HZO/ZrO2/HZO (HZZ) with morphotropic phase boundary (MPB) to enhance dielectric constant to 46 and 2Pr of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$44~\mu $ </tex-math></inline-formula>C/cm2 is employed in ferroelectric capacitive memory (FCM). The proposed HZZ memcapacitor demonstrates a remarkably high CHCS/CLCS ratio of 245x with 3 V, excellent data retention >104 s, multi-level cell (MLC), and achieves non-destructive read operation (NDRO) for 109 cycles. The MPB-based SL technique for HZZ is a promising concept that elevates the permittivity for FCM/memcapacitor non-volatile memory (NVM) or advanced logic applications.
Authors
- Pin Su (ORCID: https://orcid.org/0000-0002-8213-4103)
- Han-Tsung Liao (ORCID: https://orcid.org/0000-0001-9259-9839)
- B.-R. Chen
- M. H. Lee (ORCID: https://orcid.org/0000-0002-2007-2875)
- Yii-Tay Chang (ORCID: https://orcid.org/0009-0009-3612-8026)
- K.-Y. Hsiang (ORCID: https://orcid.org/0000-0002-4789-4668)
- Hsien‐Cheng Tseng (ORCID: https://orcid.org/0000-0003-1143-1511)
- Cheng‐Hsien Liu (ORCID: https://orcid.org/0000-0003-1882-3892)
- Zhenxiu Lou
Institutions
- National Taiwan Normal University (TW)
- National Yang Ming Chiao Tung University (TW)
- National Taiwan University (TW)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2024-10-24
- DOI
- https://doi.org/10.1109/led.2024.3485916
- Citations
- 12
- Primary Topic
- Supercapacitor Materials and Fabrication
- Type
- article
- Field-Weighted Citation Impact
- 1.41
Funders
- Semiconductor Research Corporation
- National Taiwan University