Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM With a-IGZO Cell Transistors
In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.3\times 10^{-{16}}$ </tex-math></inline-formula> A/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m, even after the high-k dielectric crystallization process.
Authors
- Jeho Na (ORCID: https://orcid.org/0000-0002-0578-4110)
- Byung Jin Cho (ORCID: https://orcid.org/0000-0003-3000-5403)
- Sung‐Yool Choi (ORCID: https://orcid.org/0000-0002-0960-7146)
- Seohak Park
- H.C. Lee (ORCID: https://orcid.org/0009-0000-8513-7433)
- Keun Heo (ORCID: https://orcid.org/0000-0003-0700-7427)
- Seong Keun Kim (ORCID: https://orcid.org/0000-0001-8712-7167)
- Heetae Kim (ORCID: https://orcid.org/0009-0001-0717-6776)
- Sung Haeng Cho (ORCID: https://orcid.org/0000-0003-1751-1870)
- Jaewook Jeong (ORCID: https://orcid.org/0000-0002-3180-2167)
- Min Ju Kim (ORCID: https://orcid.org/0000-0002-2415-6996)
- Chihun Sung (ORCID: https://orcid.org/0000-0002-6581-799X)
- Jihoon Jeon
Institutions
- Electronics and Telecommunications Research Institute (KR)
- Korea Advanced Institute of Science and Technology (KR)
- Korea University (KR)
- Jeonbuk National University (KR)
- Dankook University (KR)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2024-10-24
- DOI
- https://doi.org/10.1109/led.2024.3485609
- Citations
- 5
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 1.04
Funders
- National Research Council of Science and Technology